A wild guess is that this is some setup to do an s-parameter simulation of both a capacitor and an inductor. Without knowing the source of the picture I doubt anyone can help very much...

Andrew.

What kind of "setting"? There's no "setting" here... If using s-parameter analysis, you have to have ports - the simulator analyses the s-parameter matrix between the ports (in this case the only useful information would be S11 and S22 which would be single-ended s-parameters for the capacitor and inductor - none of the other matrix elements would be useful because there's no coupling between the ports.

Regards,

Andrew.

Hi baab,


there should be plenty of references around for how to model an inductor. Why did you choose one in Korean?

Anyway the procedure is very straightforward and logical. You just need to first be able to visualize what kind of passive components the structure will have. For example, a long straight line over a grounded substrate can be modeled as a series R+L with capacitors distributed along the R and L. This can be simplified as an R+L with a shunt cap at either end. After you have drawn your model, you need to find the component values. This is quite easy to do if you understand Y and Z parameters. If you want to make your model more complex, you can then start talking about magnetic coupling, and the skin effect etc...


regards,
Aaron

Andrew Beckett wrote on Feb 19^th, 2014, 12:21am:



what's the scheme for simulate the quality factor of Parallel LC resonator? just simulate the seperate quality and using the formular of Qtank=Qc*Ql/(Qc+Ql) ?