neoflash
Community Fellow
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Mixed-Signal Designer
Posts: 397
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Hi guys,
I have a question about 5V LDMOS on GF and TSMC 40LP process.
Lightly doped drain can increase the VDS tolerance greatly. However, oxide stress condition should not be improved by LDMOS structure.
How does 5V LDMOS with 3.3v oxide achieve VGD 5V tolerance in off state (VG=0, VD=5V)?
Regards, Neo
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