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LDMOS 5V tolerance in 40nm with 3.3v oxide (Read 146 times)
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LDMOS 5V tolerance in 40nm with 3.3v oxide
Dec 02nd, 2017, 8:11pm
Hi guys,

I have a question about 5V LDMOS on GF and TSMC 40LP process.

Lightly doped drain can increase the VDS tolerance greatly. However, oxide stress condition should not be improved by LDMOS structure.

How does 5V LDMOS with 3.3v oxide achieve VGD 5V tolerance in off state (VG=0, VD=5V)?

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San Jose
Re: LDMOS 5V tolerance in 40nm with 3.3v oxide
Reply #1 - Dec 19th, 2017, 12:08am
Drain in LDMOS is located far away from the gate - it's separated by STI and by drift region, where a significant fraction of Vds drops.
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