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The Designer's Guide Community Forum › Design › Analog Design › Noise in Subthreshold Vs. Deep-inversion region of MOSFET
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Noise in Subthreshold Vs. Deep-inversion region of MOSFET (Read 818 times)
jdp
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Noise in Subthreshold Vs. Deep-inversion region of MOSFET
Nov 16th, 2017, 7:05pm  
Hi.

Is the device (thermal/shot & Flicker) noise more in Subthreshold region of operation Vs. Strong-inversion of a MOSFET? (assuming same bias current is used in both the regions).

Any practical observation from your simulation experience?

[theoretical expressions in pic below: from http://www.cppsim.com/CircuitLectures/Lecture16.pdf ]
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