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Diode spectre model (Read 873 times)
Palz
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Diode spectre model
Oct 08th, 2017, 6:53pm
 
I’m working on device modelling (specre model) of a pn junction diode. There are parameters gap1 and gap2 for bandgap voltage (Egalpha and Egbeta). Analytically, when egalpha and egbeta terms are changed, the bandgap voltage at a particular temperature changes.

Vg(T) = Vg0 - ((alpha * T^2)/(T+beta))

But I couldn't observe any difference in the performance of the diode nor the bandgap reference circuit when I simulated in cadence.
Could anyone please tell me why this would happen?
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Geoffrey_Coram
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Re: Diode spectre model
Reply #1 - Oct 9th, 2017, 6:21am
 
I think gap1 and gap2 are only used when tlev=2.
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Palz
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Re: Diode spectre model
Reply #2 - Oct 9th, 2017, 5:15pm
 
Thanks Geoffrey. I think that would be in Hspice. What about spectre models? Do you have any idea how to define levels in a spectre model?
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Palz
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Re: Diode spectre model
Reply #3 - Oct 10th, 2017, 8:22am
 
Sorry! I'm new to device modelling. Tlev worked. Thanks!
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Andrew Beckett
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Re: Diode spectre model
Reply #4 - Dec 21st, 2017, 7:48am
 
By the way, this is all covered in the Spectre® Circuit Simulator Components and Device Models Reference manual. Take a look either via cdnshelp or looking at <SPECTREinstDir>/doc/spectremod/spectremod.pdf - there's a chapter in there in the diode equations, and it covers the different temperature level parameters too.

Regards,

Andrew.
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