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Design >> High-Power Design >> From GOX Reliability stand-point, is the VGB violation same as VBG violation?
https://designers-guide.org/forum/YaBB.pl?num=1512835784

Message started by A Kumar R on Dec 9^th, 2017, 8:09am

Title: From GOX Reliability stand-point, is the VGB violation same as VBG violation?
Post by A Kumar R on Dec 9^th, 2017, 8:09am

Hi Folks,

The question is about the basic gate-oxide reliability concern.

For example, for an nmos, if Vgate = 4 v and Vbulk = 0 v ....assume that since VGB >= 4 v we have stress on the gate.

but, for the pmos, if Vgate = 0v and Vbulk = 4 v then VGB <= -4 v then also this is defined as stress on the gate. but why?

my argument is that since the bulk is at 4 v and the gate is at 0v..does the gate really experiences the stress?

bulk is much larger in thickness compared to the gate right?

thanks.
A